industrial & multimarket data sheet rev. 2.0, 2011-02-28 final 2nd generation thinq!? 2nd generation thinq! ? sic schottky diode IDY15S120 sic silicon carbide diode
2nd generation thinq!? sic schottky diode IDY15S120 final data sheet 2 rev. 2.0, 2011-02-28 1 description the second generation of infineon sic schottky diodes has emerged over the years as the industry standard. the idyxxs120 products ar e extending the already broad portfolio with the new to-247hc (high creepage) package. the new package layout is fully compatible with the industry standard to247, and can therefore easily be placed in already ex isting designs, with no extra efforts. the higher creepage distance increases the safe ty margin against the risk of short circuits, especially arcing, which might be triggered by the presence of dust or dirt inside the system. this reduces the need of additional chemical (silicone gel or creams) or mechanical (sheaths or foils) solutions to lower the pollution level between the leads, with all consequent benefits of a lean and faster manufacturing process features ? revolutionary semiconductor material - silicon carbide ? switching behavior benchmark ? no reverse recovery/ no forward recovery ? temperature independent switching behavior ? high surge current capability ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target applications ? optimized for high temperature operation benefits ? system efficiency improvement over si diodes ? system cost / size savings due to reduced cooling requirements ? enabling higher frequency / increased power density solutions ? higher system reliability due to lower operating temperatures and less fans ? package design with high creepage distance ? reduced emi applications ? solar applications; ups; motor drives; ? smps e.g.; ccm pfc 1) j-std20 and jesd22 table 1 key performance parameters parameter value unit v dc 1200 v q c 22 nc i f @ t c < 150c 15 a table 2 pin definition pin 1 pin2 pin 3 aca type / ordering code package marking related links IDY15S120 pg-to247hc-3 d15s120 ifx sic diodes webpage
2nd generation thinq!? sic schottky diode IDY15S120 table of contents final data sheet 4 rev. 2.0, 2011-02-28 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table of contents
2nd generation thinq!? sic schottky diode IDY15S120 maximum ratings final data sheet 5 rev. 2.0, 2011-02-28 2 maximum ratings 3 thermal characteristics table 3 maximum ratings parameter symbol values (leg/device) unit note / test condition min. typ. max. continuous forward current i f - - 7.5/15 a t c = < 150c surge non-repetitive i f, sm --39/78 t c = 25c, t p = 10 ms forward current, sine halfwave - - 33/66 t c = 150c, t p = 10 ms non-repetitive peak forward current i f, max - - 150/300 t c = 25c, t p = 10 s i2 t value i2dt - - 10/40 a2s t c = 25c, t p = 10 ms -6/26 t c = 150c, t p = 10 ms repetitive peak reverse voltage v rrm - - 1200 v t j = 25c diode dv/dt ruggedness dv/dt - - 50 v/ns v r = 0...960 v power dissipation p tot - - 100/175 w t c = 25 c operating and storage temperature t j , t stg -55 - 150 c mounting torque - - 0.6 ncm m3 screws maximum of mounting processes:3 table 4 thermal characteristics parameter symbol values (leg/device) unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - - 1.5/0.9 k/w thermal resistance, junction - ambient r thja - - 40 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s
2nd generation thinq!? sic schottky diode IDY15S120 electrical characteristics final data sheet 6 rev. 2.0, 2011-02-28 4 electrical characteristics electrical characteristics, at t j =25 c, unless otherwise specified. table 5 static characteristics parameter symbol values (leg/device) unit note / test condition min. typ. max. dc blocking voltage v dc 1200 - - v t j = 25 c, i r = 0.1 ma diode forward voltage v f -1.651.8 i f = 10 a, t j = 25 c -2.55 i f = 10 a, t j = 150 c reverse current i r - 7.5/15 180/360 a i r = 1200 v, t j =25 c - 30/60 750/1500 i r = 1200 v, t j =150 c table 6 ac characteristics parameter symbol values (leg/device) unit note / test condition min. typ. max. total capacitive charge q c - 11/22 - nc v r = 400 v, f i f max di f /dt =200 a/ s, t j =150 c switching time 1) 1) t c is the time constant for the capacitive di splacement current waveform (independent from t j , i load and di / dt ), different from t rr which is dependent on t j i load and di / dt . no reverse recovery time constant t rr due to absence of minority carrier injection. t c -- <10ns c - 375/750 - pf v r = 1 v, f = 1 mhz - 30/60 - v r = 300 v, f = 1 mhz - 27/54 - v r = 600 v, f = 1 mhz
2nd generation thinq!? sic schottky diode IDY15S120 electrical characteristics diagrams final data sheet 7 rev. 2.0, 2011-02-28 5 electrical characteristics diagrams electrical characteristics, at t j =25 c, unless otherwise specified. table 7 power dissipation typ. forward characteristic (per leg) p tot = f ( t c ); parameter: r thjc(max) i f = f (v f ); t p =400 s; parameter: t j ; i f = f (t c ); per device the values double table 8 diode forward current (per leg) diode forward current (per device) t j 175 c; parameter: r thjc(max) ; v f (max); d= t p / t t j 175 c; parameter: r thjc(max) ; v f (max); d= t p / t
2nd generation thinq!? sic schottky diode IDY15S120 electrical characteristics diagrams final data sheet 8 rev. 2.0, 2011-02-28 table 9 typ. capacitance charge vs. current slope 1) (per leg) typ. reverse current vs. reverse voltage (per leg) q d =f(dif/dt)4); t j = 150 c ; i f i f max ; per device the values double i r =f(v r ); parameter: t j ; per device the values double 1) only capacitive charge occuring, guaranteed by design table 10 typ. transient thermal impedance (per leg) typ. transient thermal impedance (per device) z thjc = f(t p ) ; parameter: d = t p / t z thjc = f(t p ) ; parameter: d = t p / t
2nd generation thinq!? sic schottky diode IDY15S120 electrical characteristics diagrams final data sheet 9 rev. 2.0, 2011-02-28 table 11 typ. c stored energy (per leg) typ. capacitance vs. reverse voltage (per leg) e c = f (v r ); per device the values double c=f ( v r ); t c =25 c , f =1 mhz; per device the values double
2nd generation thinq!? sic schottky diode IDY15S120 package outlines final data sheet 10 rev. 2.0, 2011-02-28 6 package outlines figure 1 dimensions in mm/inches
2nd generation thinq!? sic schottky diode IDY15S120 revision history final data sheet 11 rev. 2.0, 2011-02-28 7 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2011-02-28 published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. with respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including wit hout limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for in formation on the types in question, please contact the neares t infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applicat ions or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protec t human life. if they fail, it is reason able to assume that the health of the user or other persons may be endangered. 2nd generation thinq!? 2nd generation thinq!? sic schottky diode revision history: 2011-02-28, rev. 2.0 previous revision: revision subjects (major ch anges since last revision) 2.0 release of final data sheet
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